»ó¼¼ ¼³¸í
¡Ü 8, 12ÀÎÄ¡ Dia : Dia Å©±â¿¡ µû¶ó µÎ²² Áõ°¡

¡Ü P(Positive) Type(Dopant Type)
 - Impurity(ºÒ¼ø¹°) Doping À¸·Î Àü±âÀû Ư¼ºÀ» ºÎ¿©
  ¡¤ 3°¡ ¿ø¼Ò(B, Al, Ga) DopingÀ¸·Î Ư¼ºÀ» º¯È­½ÃÅ´
  ¡¤ ¾ç°øÀÌ ÀüÇÏ ¿î¹ÝÀÚÀÓ

¡Ü ÀúÇ× (¥Ø) : Impurity Doping ¾çÀÌ Áõ°¡Çϸé ÀúÇ×ÀÌ ³·¾ÆÁü

¡Ü ¿þÀÌÆÛÀÇ ¹æÇ⼺ Ç¥½Ã ¹æ¹ý
 - Notch
  ¡¤ °¡ÀåÀÚ¸®¿¡ ÀÛÀº VÀÚ ¸ð¾çÀÇ È¨À» ¸¸µå´Â °Í
  ¡¤ 200 mmÀÌ»ó ´ëÇü ¿þÀÌÆÛ¿¡¼­ ÁÖ·Î »ç¿ë
 - Flat
  ¡¤ ¿þÀÌÆÛÀÇ °¡ÀåÀÚ¸®¿¡ ÀÏÁ¤ ±æÀÌÀÇ ÆòÆòÇÑ ºÎºÐÀ» ¸¸µë
  ¡¤ Primary Flat °ú Secondary Flat ÀÇ °¢µµ¿Í ±æÀ̸¦ ÅëÇØ ¿þÀÌÆÛÀÇ Á¾·ù¿Í µµÇÎÀ¯Çü ±¸ºÐ

¡Ü Orientation : 1-0-0
 - Àý´ÜÀ¸·Î °áÁ¤ Æò¸éÀ» ³ªÅ¸³¿
 - ÃÖ±Ù¿¡´Â Àý´Ü º¸´Ù´Â Ç¥½Ã·Î °áÁ¤ Æò¸éÀ» ³ªÅ¸³¿
 - ÀÌ¿Â ÁÖÀÔ ¹æÇâÀ» ¼±ÅÃ

¡Ü Thermal Oxidation (»êÈ­¸·)
 - °í¿Â¿¡¼­ Silicon Wafer ¸¦ »êÈ­½ÃÄÑ SiO2 Àý¿¬¸·À» ¼ºÀå½ÃÅ°´Â °øÁ¤
 - ÀåÁ¡ : º¸È£¸·(Surface Passivation), ºÒ¼ø¹° Á¦°Å(Surface Cleaning), ¼ÒÀÚ°£ °Ý¸®(Isolation)

¡Ü Grade
 - Prime Grade : Á¦Ç° ¾ç»ê¿ë, High Quality / High Cost
 - Test Grade : ¹æºñ À¯Áö °ü¸® ¹× ¿£Áö´Ï¾î ½ÇÇè µî, High Quality
 - Fallout Grade : ½ÇÇèÀ̳ª ±³À°¸ñÀû µî

¡Ü Ư¼ö»ç¾ç Wafer °øÁ¤
 - LPCVD (Low Pressure Chemical Vapor Deposition) : Nitride, Poly-Silicon, Amorphous Silicon ¾ç¸é ÁõÂø
 - PECVD (Plasma Enhanced Chemical Vapor Deposition) : Nitride, TEOS(Tetraethyl Orthosilicate), ACL(Amorphous Carbon Layer) ´Ü¸é ÁõÂø
 - Metal Sputtering : Al, Cu, Ti ÁõÂø

¡Ü SK½ÇÆ®·Ð
»ó¼¼ ±Ô°Ý
  • Silicon Wafer , P -Type, 1-0-0 (Orientation)
Cat. No. Model Dia.
(inch)
Thickness
(um)
Resistivity
(ohm)
Polishing
Surface
Grade Notch
or Flat
PARTICLE
W04-171-801 SW8P008P 8 700-750 4~12 Single Side PRIME Notch  
W04-171-804 SW8P010P 8~12 Flat
W04-171-807 SW8P014P 3~25 Double Side
W04-171-810 SW8P500TSN 1~50 Single Side TEST Notch
W04-171-813 SW8P500TSF Flat
W04-171-816 SW8P500TDF Double Side
W04-171-819 SW12P990F 12 750-800 1~99 Fallout Notch No COA
W04-171-822 SW12P030T 755-795 1~30 TEST 120nm 1000EA
W04-171-825 SW12P050T12 750-800 1~50 120nm 50EA
W04-171-828 SW12P050T05 50nm 50EA
W04-171-831 SW12P010P05 8~12 PRIME 50nm 30EA
W04-171-834 SW12P020P05 14~27 50nm 30EA
  • Silicon Wafer, , P -Type, 1-0-0 (Orientation), Test Grade
Cat. No. Model Dia.
(inch)
Thickness
(um)
Resistivity
(ohm)
Polishing Surface Notch
or Flat
Thermal Oxidation
W04-171-851 SSW8P500TND01 8 700-750 1~50ohm.cm Single Side Notch 0.1um with Dry (1,000Å)
W04-171-854 SSW8P500TND02 0.2um with Dry (2,000Å)
W04-171-857 SSW8P500TND03 0.3um with Dry (3,000Å)
W04-171-860 SSW8P500TNW03 0.3um with Wet (3,000Å)
W04-171-863 SSW8P500TNW05 0.5um with Wet (5,000Å)
W04-171-866 SSW8P500TNW10 1.0um with Wet (10,000Å)
W04-171-869 SSW8P500TNW15 1.5um with Wet (15,000Å)
W04-171-872 SSW8P500TNW20 2.0um with Wet (20,000Å)
W04-171-875 SSW8P500TFD01 Flat 0.1um with Dry (1,000Å)
W04-171-878 SSW8P500TFD02 0.2um with Dry (2,000Å)
W04-171-881 SSW8P500TFD03 0.3um with Dry (3,000Å)
W04-171-884 SSW8P500TFW03 0.3um with Wet (3,000Å
W04-171-887 SSW8P500TFW05 0.5um with Wet (5,000Å)
W04-171-890 SSW8P500TFW10 1.0um with Wet (10,000Å)
W04-171-893 SSW8P500TFW15 1.5um with Wet (15,000Å)
W04-171-896 SSW8P500TFW20 2.0um with Wet (20,000Å)
W04-171-899 SSW12N1000 12 750-800 1~100ohm.cm Double Side Notch 0.1um (1,000Å)
W04-171-902 SSW12N2000 0.2um (2,000Å)
W04-171-905 SSW12N3000 0.3um (3,000Å)
W04-171-908 SSW12N4000 0.4um (4,000Å)
W04-171-911 SSW12N5000 0.5um (5,000Å)
¡Ü Silicon Wafer, SiO2´Â ÁÖ¹® ½Ã, Thermal Oxidation ¹üÀ§ ³»¿¡¼­ ¼±ÅÃÇؾßÇÔ